Faculty

Ph.D., Zhejiang University, Hangzhou, 2004

B.S., Nanchang University, Nanchang, 1999

1. NSFC, Grant No. 50902116, RMB 200000, 2010.1 – 2012.12

2. Program for New Century Excellent Talents in Fujian Province University, RMB 300000, 2006.9 – 2009.9

3. Scientific Research Foundation for the Returned Overseas Chinese Scholars，State Education Ministry．RMB 20000, 2007.4 – 2009.4

Focus on the formation mechanism of the micro-defects in Czochralski silicon material used for the ULSI. The main research field included the formation of denuded zone near the surface of silicon material used for the fabrication of ULSI, the influence on the generation of micro-defects by the high pressure (1Gpa) exerted on the wafer, the influence of the rapid treatment annealing (RTA)on the generation of the defects in silicon, the formation of the defects during the diode process and the influence of annealing temperature, lasting time and pressure on the electric performance of silicon wafer, etc. The project was supported by the Natural Science Foundation of China and 863 programs.

1. The fabrication of self-assembly zinc microsphere, 2011.5, ZL200910113125.412.

2. The formation of zinc microsphere, 2012.7, ZL 2010 1 0502526.1

1. Can Cui, Jin Xu* etc, 2016Silver nanoparticles modified reduced graphene oxide wrappedAg3PO4TiO2 visible-light-active photocatalysts with superior performance, The Royal Society of Chemistry, 6, 43697-43706, 2016

2. Jin Xu, Yaochao Lv, Weibin Guo and Tingting Xie, 2016Effect of ramping on oxygen precipitates and Cu–vacancy complex in Czochralski silicon, Journal of Crystal Growth, 445, 53-57, 2016

3. Jin Xu, Chuan Ji and Guangchao Zhang, Effect of rapid thermal processing on copper precipitation in pp silicon epitaxial wafers with heavily boron doped substrates, Journal of Applied Physics, 115, 024505-1 – 024505-4, 2014

4. Jin Xu, Tingting Xie, Yaochao Lv and Chuan Ji, A new photoluminescence band in copper-contaminated n-type Czochralski silicon, Journal of Crystal Growth, 407, 48-51, 2014

5. Ji Chuan, Zhang Guangchao and Xu Jin, Influence of co-precipitation of copper and nickel on the formation of a denuded zone in Czochralski silicon, Journal of Semiconductors, 34(10), 103005-1 – 103005-5, 2013

6. Jin Xu, Nating Wang and Deren Yang, Influence of oxygen precipitation on copper precipitation in Czochralski silicon, Journal of Applied Physics, 111, pp094907(1) - 094907(4), 2012

7.Jin Xu, Nating Wang and Weiqiang Wang, Synthesis and photoluminescence properties of self-assembled Eu-doped ZnO hollow microspheres, Physica Status Solidi A, 208(12), pp2833-2838, 2011

8.Rong Wang, Jin Xu, Chao Chen, Luminescent characteristics of Sr2B2O5: Tb3+, Li+ green phosphor, Materials Letters, 68，pp307-309，2012

9.Jin Xu, Weiqiang Wang, Deren Yang and H. J. Moeller, Transmission electron microscopy investigation of the micro-defects in Czochralski silicon, Journal of Alloys and Compounds, 478，pp758-762，2009

10.Lei Li, Yawen Zhong, Jian Li, Caikang Chen, Aijuan Zhang, Jin Xu and Zhi Ma, Thermally stable and solvent resistant honeycomb structured polystyrene films via photochemical cross-linking, Journal of Materials chemistry, 19, pp222-7227, 2009

11.Jin Xu, Yongzhi Wang, Deren Yang and H. J. Moeller, Influence of nickel precipitation on the formation of denuded zone in Czochralski silicon, Journal of Alloys and Compounds, 502，pp351-355，2010

12.Jin Xu, Deren Yang, H.J.Moeller. Influence of copper precipitation on the formation of denuded zone in Czochralski silicon, Journal of Applied Physics, 2007, 102: 114506

13. Jin XU, Xiangyang MA, Jinggang LU, Chunlong LI, Deren YANG. Extended defects in nitrogen-doped Czochralski silicon during diode process, Physica B, 2004, 348 : 226-230

14. Jin XU, Deren YANG, Xiangyang MA, Xuegong YU, Chunlong LI; Duanlin QUE, A.Misiuk. Oxygen precipitation in Czochralski silicon annealed at 450°C under a high pressure of 1 GPa, Physica B, 2003, 327 : 60-64

15. Jin XU, Deren YANG, Chunlong LI, Xiangyang MA, Duanlin QUE, A.Misiuk. Transmission electron microscopy investigation of oxygen precipitation in Czochralski silicon annealed under high pressure, Material Science and Engineering B, 2003, 102 : 84-87

16. Jin XU, Deren YANG, Duanlin QUE, A.Misiuk. Investigation of thermal donors in Czochralski silicon annealed at 450°C under high pressure of 1 GPa, Physica B, 2003, 339 : 204-207

17. Jin XU, Deren YANG, Xiangyang MA, Duanlin QUE, A.Misiuk. Oxygen precipitation kinetics of Czochralski silicon preannealed under high pressure, Physica B, 2003, 340-342 : 1041-1045

18. Zhengqiang XI, Deren YANG, Jin XU, Yujie JI, Duanlin QUE, H.J.Moeller. Effect of intrinsic point defects on copper precipitation in large-diameter Czochralski silicon, Applied Physics Letters, 2003, 83(15) : 3048-3050

19. Deren YANG, Jia CHU, Jin XU, Duanlin QUE. Behavior of oxidation-induced stacking faults in annealed Czochralski silicon doped by nitrogen, Journal of Applied Physics, 2003, 93(11) : 8926-8929

20. Chunlong LI, Xiangyang MA, Jin XU, Xuegong YU, Deren YANG, Duanlin QUE. Effect of Rapid Thermal Process on oxygen precipitation in heavily boron-doped Czochralski silicon wafer, Japanese Journal of Applied Physics, 2003, 42(12) : 7290-7291

21. Deren YANG, Xuegong YU, Xiangyang MA, Jin XU, Liben LI, Duanlin QUE. Germanium effect on void defects in Czochralski silicon, Journal of Crystal Growth, 2002, 243 : 371-374

22. Xuegong YU, Deren YANG, Xiangyang MA, Jin XU, Liben LI, Duanlin QUE. Effect of oxygen precipitation on voids in bulk silicon, Microelectronic Engineering, 2003, 66 : 289-296

23. Zhengqiang XI, Deren YANG, Jun CHEN, Jin XU, Yujie JI, Duanlin QUE, H.J.Moeller. Influence of copper precipitation on oxygen precipitation in Czochralski silicon, Semiconductor Science and Technology, 2004, 19 : 299-305

24. Hongjie WANG, Xiangyang MA, Jin XU, Xuegong YU, Deren YANG. Effects of nitrogen doping on the dissolution of oxygen precipitates in Czochralski silicon during rapid thermal annealing, Semiconductor Science and Technology, 2004, 19 : 715-719

25. Xiangyang Ma , Hui Zhang, Jin Xu, “Synthesis of La1-xCaxMnO3 nanowires by a sol–gel process”, Chem.Phys.Letter, 363(2002), 579

26. Hui Zhang, Xiangyang Ma, Jin Xu, “Directional CdS nanowires fabricated by chemical bath deposition”, J.Crystal.Growth, 246 (2002), 108

27. Hui Zhang, Xiangyang Ma, Jin Xu, Junjie Niu and Deren Yang, “Arrays of ZnO nanowires fabricated by a simple chemical solution route”, Nanotechnology, 14(2003), 423

28. Deren Yang, Gan Wang, Jin Xu, Dongsheng Li, Duanlin Que, C. Funke, H.J. Moeller, “Influence of oxygen precipitates on the warpage of annealed silicon wafers”, Microelectronic Engineering, 66(2003), 345

29. Q.Yang, J.Sha, J.Xu, et al, “Aligned single crystal boron nanowires”, Chem.Phys.Lett, 379 (2003), 87